![]() The substantially lower charge carrier mobility in organic semiconductors (OSCs) compared with their inorganic counterparts is a limitation to the performance of organic transistors. Nevertheless, they are still restricted to the low-to-medium megahertz range, which does not allow broad application 12, 13, 14. Organic field-effect transistors (FET) were first reported in 1986 and have shown impressive improvements in the past two decades 4, 5, 6, 7, 8, 9, 10, 11. Our results open the door to new device concepts of high-performance organic electronics with ever faster switching speeds. These bipolar transistors also give insight into the minority carrier diffusion length-a key parameter in organic semiconductors. Here we present organic bipolar transistors with outstanding device performance: a previously undescribed vertical architecture and highly crystalline organic rubrene thin films yield devices with high differential amplification (more than 100) and superior high-frequency performance over conventional devices. The potential of organic electronics can be leveraged only if the performance of organic transistors is improved markedly. Among materials systems suitable for thin-film electronics, organic semiconductors are of particular interest their low cost, biocompatible carbon-based materials and deposition by simple techniques such as evaporation or printing enable organic semiconductor devices to be used for ubiquitous electronics, such as those used on or in the human body or on clothing and packages 1, 2, 3. In contrast, the saturation and cut-off regions allow bipolar transistors to be used as switches because there is little electrical resistance between emitter and collector in the saturation region and little current flows in the cut-off region.Devices made using thin-film semiconductors have attracted much interest recently owing to new application possibilities. Therefore, an amplifier circuit can be configured using the active area. When a bipolar transistor is in the active region, the collector current is basically h FE times the base current. Therefore, if the emitter and collector terminals are reversed, a bipolar transistor has a much lower h FE and does not function as intended. (For example, in the case of an npn transistor, the collector and the emitter on both sides of the p region of the base are n regions, which look the same.) However, the dopant concentrations in the collector and emitter regions are quite different. The structure of a bipolar transistor looks symmetrical. Two types of bipolar transistor are available, known as npn and pnp, based on the type of junction. Since the bipolar transistor was the first transistor to be invented, when one simply says "transistors," it sometimes means bipolar transistors. Whereas a field-effect transistor is a unipolar device, a bipolar transistor is so named because its operation involves two kinds of charge carriers, holes and electrons. ![]() ![]() ![]() ![]() Bipolar transistors are a type of transistor composed of pn junctions, which are also called bipolar junction transistors (BJTs). ![]()
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